Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/14184
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dc.contributor.authorFan, Weijun
dc.date.accessioned2008-11-06T01:57:14Z
dc.date.available2008-11-06T01:57:14Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.urihttp://hdl.handle.net/10356/14184
dc.description.abstractThe objective of this project is to calculate and analyze the subband energy levels in quantum wells of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with eight-band K·P modes, and to design Quantum Well Infrared Photodectors (QWIP) from the two kinds of QWs, and to evaluate the performance of two kinds of QWIPs in comparison with the simulation results. In this project, the n-type QW structures of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with specific parameters are grown by all solid source MBE on the GaAs substrates. Two material systems and quantum well structures are systematically characterized and investigated. After characterization, two kinds of samples are fabricated into QWIP devices. Some of them show evident photoresponse which well matches simulation results.en_US
dc.format.extent44 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Molecular electronics
dc.titleGaAs/AlAs/AlGaAs quantum well infrared photodetectoren_US
dc.typeResearch Reporten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.ispartofseries.reportRG 101/05en_US
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Appears in Collections:EEE Research Reports (Staff & Graduate Students)
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