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Title: Nanoscale modification of magnetic properties for effective domain wall pinning
Authors: Jin, Tianli
Tan, Funan
Law, Wai Cheung
Gan, Weiliang
Soldatov, Ivan
Schäfer, Rudolf
Ma, Chuang
Liu, Xiaoxi
Lew, Wen Siang
Piramanayagam, S. N.
Keywords: Science::Physics::Electricity and magnetism
Issue Date: 2018
Source: Jin, T., Tan, F., Law, W. C., Gan, W., Soldatov, I., Schäfer, R., . . . Piramanayagam, S. N. (2019). Nanoscale modification of magnetic properties for effective domain wall pinning. Journal of Magnetism and Magnetic Materials, 475, 70-75. doi:10.1016/j.jmmm.2018.11.114
Journal: Journal of Magnetism and Magnetic Materials
Abstract: Magnetic domain wall memory technology, wherein the information is stored in magnetic domains of multiple magnetic nanowires, is a potential concept proposed to store the large amount of digital data in the near future, which is generated due to the widespread use of social media and computing devices. However, one of the technological challenges which remains to be solved in domain wall memory is the controllable pinning of the domain walls at the nanometer scale. Here, we demonstrate the possibility to stabilize domain walls with nanoscale modification of magnetic properties by using thermal diffusion of elements from crossbar configuration. We have inspected and evaluated the magnetic properties of the nanowires using Kerr microscopy. The pinning field induced by Cr diffusion of our Ni80Fe20 nanowire was estimated to be about 8 kA/m as determined from minor loop (magnetoresistance vs. magnetic field) measurements. The proposed concept can potentially be used in future domain wall memory applications.
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2018.11.114
Rights: © 2018 Elsevier B.V. All rights reserved. This paper was published in Journal of Magnetism and Magnetic Materials and is made available with permission of Elsevier B.V.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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