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Title: Facile method to reduce surface defects and trap densities in perovskite photovoltaics
Authors: Han, Guifang
Koh, Teck Ming
Lim, Swee Sien
Goh, Teck Wee
Guo, Xintong
Leow, Shin Woei
Begum, Raihana
Sum, Tze Chien
Mathews, Nripan
Mhaisalkar, Subodh Gautam
Keywords: Engineering::Materials
Issue Date: 2017
Source: Han, G., Koh, T. M., Lim, S. S., Goh, T. W., Guo, X., Leow, S. W., . . . Mhaisalkar, S. G. (2017). Facile method to reduce surface defects and trap densities in perovskite photovoltaics. ACS Applied Materials & Interfaces, 9(25), 21292-21297. doi:10.1021/acsami.7b05133
Journal: ACS Applied Materials & Interfaces
Abstract: Owing to improvements in film morphology, crystallization process optimization, and compositional design, the power conversion efficiency of perovskite solar cells has increased from 3.8 to 22.1% in a period of 5 years. Nearly defect-free crystalline films and slow recombination rates enable polycrystalline perovskite to boast efficiencies comparable to those of multicrystalline silicon solar cells. However, volatile low melting point components and antisolvent treatments essential for the processing of dense and smooth films often lead to surface defects that hamper charge extraction. In this study, we investigate methylammonium bromide (MABr) surface treatments on perovskite films to compensate for the loss of volatile cation during the annealing process for surface defect passivation, grain growth, and a bromide-rich top layer. This facile method did not change the phase or bandgap of perovskite films yet resulted in a significant increase in the open circuit voltages of devices. The devices with 10 mM MABr treatment show 2% improvement in absolute power conversion efficiency over the control sample.
ISSN: 1944-8244
DOI: 10.1021/acsami.7b05133
Schools: School of Materials Science and Engineering 
School of Physical and Mathematical Sciences 
Interdisciplinary Graduate School (IGS) 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Research Techno Plaza 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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