Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/142059
Title: Strain-engineered group IV light sources for photonic-integrated circuits
Authors: Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Nam, D. (2020). Strain-engineered group IV light sources for photonic-integrated circuits. Proceedings of SPIE - Optical Interconnects XX, 11286, 112860X-. doi:10.1117/12.2549272
Project: RG179/17
NRF-CRP19-2017-01 (3)
NRF-ANR-0009
MOE2018-T2-2-011 (S)
Abstract: Integration of photonic devices with CMOS circuits has recently generated much interest for numerous applications ranging from Internet networks to sensor technology. For example, integrated optical interconnects have emerged as a strong contender to replace bandwidth-hungry and energy-guzzling electrical interconnects in data centers and inside microprocessors. However, the lack of group IV semiconductor materials suitable for light emission has thus far prevented the realization of such important photonic-integrated circuits. In this paper, we will present our research works on strain-engineered group IV light sources on silicon that will help enable photonic-integrated circuits.
URI: https://hdl.handle.net/10356/142059
DOI: 10.1117/12.2549272
Rights: Copyright 2020 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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