Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/142093
Title: Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density
Authors: Son, Bongkwon
Lin, Yiding
Lee, Kwang Hong
Chen, Qimiao
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Son, B., Lin, Y., Lee, K. H., Chen, Q., & Tan, C. S. (2020). Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density. Journal of Applied Physics, 127(20), 203105-. doi:10.1063/5.0005112
Project: NRF-CRP19-2017-01-00
Journal: Journal of Applied Physics
Abstract: Dark current characteristics of germanium (Ge) vertical p-i-n photodetectors were studied. Ge photodetectors were demonstrated on the germanium-on-insulator (GOI) platforms realized via direct wafer bonding and layer transfer. GOI platforms with two different threading dislocation densities (TDDs) of 3.2 × 106 cm−2 (low TDD) and 5.2 × 108 cm−2 (high TDD) were varied via furnace annealing in oxygen ambient. An ultra-low dark current density of 1.12 mA/cm2 for epi-Ge photodetectors was obtained for a low TDD Ge photodetector. This is reduced by a factor of 53 in comparison with a high TDD Ge photodetector. A dominant leakage contribution component shifts from bulk leakage to surface leakage as TDD decreases to 3.2 × 106 cm−2, suggesting that advanced surface passivation is required to further reduce the leakage current. Through an activation energy study, it is revealed that a primary bulk leakage mechanism shifts from Shockley–Read–Hall (SRH) leakage to diffusion leakage in a temperature range of 323–353 K. The surface leakage performed with plasma enhanced chemical vapor deposition-deposited SiO2 is governed by SRH and trap-assisted tunneling leakage processes. Two orders of magnitude enhancement in the effective carrier lifetime is observed with the reduction in TDD. This work suggests that bulk leakage current density and effective lifetime analysis provide a better understanding of TDD-dependent dark leakage current study.
URI: https://hdl.handle.net/10356/142093
ISSN: 0021-8979
DOI: 10.1063/5.0005112
Rights: © 2020 Author(s). All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of Author(s).
Fulltext Permission: embargo_20210605
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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