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|Title:||Novel plasma-assisted low-temperature-processed SnO2 thin films for efficient flexible perovskite photovoltaics||Authors:||Subbiah, Anand S.
Sarkar, Shaibal K.
|Keywords:||Engineering::Materials||Issue Date:||2018||Source:||Subbiah, A. S., Mathews, N., Mhaisalkar, S., & Sarkar, S. K. (2018). Novel plasma-assisted low-temperature-processed SnO2 thin films for efficient flexible perovskite photovoltaics. ACS Energy Letters, 3(7), 1482-1491. doi:10.1021/acsenergylett.8b00692||Journal:||ACS Energy Letters||Abstract:||The recent evolution of solution-processed hybrid organic–inorganic perovskite-based photovoltaic devices opens up the commercial avenue for high-throughput roll-to-roll manufacturing technology. To circumvent the thermal limitations that hinder the use of metal oxide charge transport layers on plastic flexible substrates in such technologies, we employed a relatively low-power nitrogen plasma treatment to achieve compact SnO2 thin-film electrodes at near room temperature. The perovskite photovoltaic devices thus fabricated using N2 plasma-treated SnO2 performed on par with thermally annealed SnO2 electrodes and resulted in a power conversion efficiency (PCE) of ca. 20.3% with stabilized power output (SPO) of ca. 19.1% on rigid substrates. Furthermore, the process is extended to realize flexible perovskite solar cells on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates with champion PCE of 18.1% (SPO ca. 17.1%), which retained ca. 90% of its initial performance after 1000 bending cycles. Our investigations reveal that deep ultraviolet irradiation associated with N2 and N2O plasma emission plays a major role in obtaining good quality metal oxide thin films at lower temperatures and offers promise toward facile integration of a wide variety of metal oxides on flexible substrates.||URI:||https://hdl.handle.net/10356/142118||ISSN:||2380-8195||DOI:||10.1021/acsenergylett.8b00692||Rights:||This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsenergylett.8b00692||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||ERI@N Journal Articles|
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