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Title: Novel plasma-assisted low-temperature-processed SnO2 thin films for efficient flexible perovskite photovoltaics
Authors: Subbiah, Anand S.
Mathews, Nripan
Mhaisalkar, Subodh
Sarkar, Shaibal K.
Keywords: Engineering::Materials
Issue Date: 2018
Source: Subbiah, A. S., Mathews, N., Mhaisalkar, S., & Sarkar, S. K. (2018). Novel plasma-assisted low-temperature-processed SnO2 thin films for efficient flexible perovskite photovoltaics. ACS Energy Letters, 3(7), 1482-1491. doi:10.1021/acsenergylett.8b00692
Journal: ACS Energy Letters
Abstract: The recent evolution of solution-processed hybrid organic–inorganic perovskite-based photovoltaic devices opens up the commercial avenue for high-throughput roll-to-roll manufacturing technology. To circumvent the thermal limitations that hinder the use of metal oxide charge transport layers on plastic flexible substrates in such technologies, we employed a relatively low-power nitrogen plasma treatment to achieve compact SnO2 thin-film electrodes at near room temperature. The perovskite photovoltaic devices thus fabricated using N2 plasma-treated SnO2 performed on par with thermally annealed SnO2 electrodes and resulted in a power conversion efficiency (PCE) of ca. 20.3% with stabilized power output (SPO) of ca. 19.1% on rigid substrates. Furthermore, the process is extended to realize flexible perovskite solar cells on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates with champion PCE of 18.1% (SPO ca. 17.1%), which retained ca. 90% of its initial performance after 1000 bending cycles. Our investigations reveal that deep ultraviolet irradiation associated with N2 and N2O plasma emission plays a major role in obtaining good quality metal oxide thin films at lower temperatures and offers promise toward facile integration of a wide variety of metal oxides on flexible substrates.
ISSN: 2380-8195
DOI: 10.1021/acsenergylett.8b00692
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
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