Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/142186
Title: Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo
Authors: Zhuk, Siarhei
Wong, Terence Kin Shun
Tyukalova, Elizaveta
Guchhait, Asim
Seng, Debbie Hwee Leng
Tripathy, Sudhiranjan
Wong, Ten It
Sharma, Mohit
Medina, Henry
Duchamp, Martial
Wong, Lydia Helena
Dalapati, Goutam Kumar
Keywords: Engineering::Materials
Issue Date: 2019
Source: Zhuk, S., Wong, T. K. S., Tyukalova, E., Guchhait, A., Seng, D. H. L., Tripathy, S., . . . Dalapati, G. K. (2019). Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo. Applied Surface Science, 471, 277-288. doi:10.1016/j.apsusc.2018.11.227
Journal: Applied Surface Science
Abstract: Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS 2 layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.
URI: https://hdl.handle.net/10356/142186
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2018.11.227
Rights: © 2018 Elsevier B.V. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:ERI@N Journal Articles

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