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Title: Device engineering for all-inorganic perovskite light-emitting diodes
Authors: Luo, Dongxiang
Chen, Qizan
Qiu, Ying
Zhang, Menglong
Liu, Baiquan
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Luo, D., Chen, Q., Qiu, Y., Zhang, M., & Liu, B. (2019). Device engineering for all-inorganic perovskite light-emitting diodes. Nanomaterials, 9(7), 1007-. doi:10.3390/nano9071007
Journal: Nanomaterials
Abstract: Recently, all-inorganic perovskite light-emitting diodes (PeLEDs) have attracted both academic and industrial interest thanks to their outstanding properties, such as high efficiency, bright luminance, excellent color purity, low cost and potentially good operational stability. Apart from the design and treatment of all-inorganic emitters, the device engineering is another significant factor to guarantee the high performance. In this review, we have summarized the state-of-the-art concepts for device engineering in all-inorganic PeLEDs, where the charge injection, transport, balance and leakage play a critical role in the performance. First, we have described the fundamental concepts of all-inorganic PeLEDs. Then, we have introduced the enhancement of device engineering in all-inorganic PeLEDs. Particularly, we have comprehensively highlighted the emergence of all-inorganic PeLEDs, strategies to improve the hole injection, approaches to enhance the electron injection, schemes to increase the charge balance and methods to decrease the charge leakage. Finally, we have clarified the issues and ways to further enhance the performance of all-inorganic PeLEDs.
ISSN: 2079-4991
DOI: 10.3390/nano9071007
Rights: © 2019 The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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