Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/142577
Title: Perturbation-induced seeding and crystallization of hybrid perovskites over surface-modified substrates for optoelectronic devices
Authors: Ahmad, Riyas
Surendran, Abhijith
Harikesh, Padinhare Cholakkal
Haselsberger, Reinhard
Nur Fadilah Jamaludin
John, Rohit Abraham
Koh, Teck Ming
Bruno, Annalisa
Leong, Wei Lin
Mathews, Nripan
Michel-Beyerle, Maria-Elisabeth
Mhaisalkar, Subodh Gautam
Keywords: Engineering::Materials
Issue Date: 2019
Source: Ahmad, R., Surendran, A., Harikesh, P. C., Haselsberger, R., Nur Fadilah Jamaludin, John, R. A., . . . Mhaisalkar, S. G. (2019). Perturbation-induced seeding and crystallization of hybrid perovskites over surface-modified substrates for optoelectronic devices. ACS Applied Materials & Interfaces, 11(31), 27727-27734. doi:10.1021/acsami.9b05965
Project: NRF-CRP14-2014-03
ONRG-NICOP-N62909-17-1-2155
Journal: ACS Applied Materials & Interfaces
Abstract: Growing a monocrystalline layer of lead halide perovskites directly over substrates is necessary to completely harness their stellar properties in optoelectronic devices, as the single crystals of these materials are extremely brittle. We study the crystallization mechanism of perovskites by antisolvent vapor diffusion to its precursor solution and find that heterogeneous nucleation prevails in the process, with the crystallization dish walls providing the energy to overcome the nucleation barrier. By perturbing the system using sonication, we are able to introduce homogeneously nucleated seed crystals in the precursor solution. These seeds lead to the growth of closely packed crystals over surface-modified substrates kept in the precursor solution. This crystallization process is substrate independent and scalable and can be utilized to fabricate planar optoelectronic devices. We demonstrate a methylammonium lead iodide planar crystal photoconductor with a colossal detectivity of 1.48 × 1013 Jones.
URI: https://hdl.handle.net/10356/142577
ISSN: 1944-8244
DOI: 10.1021/acsami.9b05965
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.9b05965
Fulltext Permission: embargo_20200814
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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