Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/142860
Title: Characterization of sic power devices for dualactive bridge converter
Authors: Li, Yeo Howe
Kanamarlapudi, Venkata Ravi Kishore
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Li, Y. H., & Kanamarlapudi, V. R. K. (2017). Characterization of sic power devices for dualactive bridge converter. 2017 Asian Conference on Energy, Power and Transportation Electrification. doi:10.1109/ACEPT.2017.8168592
Abstract: Double pulse testers are required for extraction of switching energies and waveforms of power devices. With the increasing adoption of wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) comes an increasing need for the creation of double pulse testers and associated procedures capable of testing fast switching speeds. To date, many papers involving double pulse test setups have been published. However, these papers tend to focus on the results of the characterisation rather than the technical aspects of the experimental setup itself. In this paper, the characterisation procedure and practical considerations of a double pulse tester are presented in detail. Practical considerations involving the testing of fast switches like SiC MOSFETs are also reviewed and highlighted.
URI: https://hdl.handle.net/10356/142860
ISBN: 9781538609712
DOI: 10.1109/ACEPT.2017.8168592
Rights: © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ACEPT.2017.8168592.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Conference Papers

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