Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/142971
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dc.contributor.authorShiau, Li Lynnen_US
dc.contributor.authorGoh, Simon Chun Kiaten_US
dc.contributor.authorWang, Xinglien_US
dc.contributor.authorZhu, MinMinen_US
dc.contributor.authorSahoo, Maminaen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.contributor.authorLai, Chao-Sungen_US
dc.contributor.authorLiu, Zhengen_US
dc.contributor.authorTay, Beng Kangen_US
dc.date.accessioned2020-07-16T08:47:30Z-
dc.date.available2020-07-16T08:47:30Z-
dc.date.issued2020-
dc.identifier.citationShiau, L. L., Goh, S. C. K., Wang, X., Zhu, M., Sahoo, M., Tan, C. S., ... Tay, B. K. (2020). Effects of precursors' purity on graphene quality : synthesis and thermoelectric effect. AIP Advances, 10(4), 045016. doi:10.1063/1.5142310en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttps://hdl.handle.net/10356/142971-
dc.description.abstractA chemical vapor deposition method has been proven to produce large scale monolayer graphene. However, it is often reported that such graphene contains a varying amount of defects. In this work, methane precursors of different purities [99.99% (4-9G), 99.90% (3-9G), and 98.90% (2-9G)] were used. It is shown that the introduction of defects occurs during graphene growth. It has been attributed to the presence of trace oxygen molecules in the gas precursors. By controlling the amount of oxygen present, one is able to tune the defect density in graphene at will. It is purported that the oxygen reacts with methane to yield methanol and formaldehyde. The latter is oxidized to formic acid. As the graphene network expands, the alcohol and formic acid are incorporated as C - O and O - C=O functional groups. In turn, the graphene experiences an overall global tensile strain due to local bond distortion induced by the electronegative oxygen containing groups. Furthermore, the presence of N2 molecules impedes the proper coalescing of carbon-containing molecules for the formation of the sp2-rich carbon network. Electrical measurement conducted suggests that a high purity precursor (4-9G) induces the least amount of defects, which confers a high Seebeck coefficient (105.1 μV/K) and a low sheet resistance (58.3 ω). In the case of a larger volume of oxygen in the precursor, electrical performance decreases generally.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.description.sponsorshipEDB (Economic Devt. Board, S’pore)en_US
dc.language.isoenen_US
dc.relationMOE2015-T2-2-043en_US
dc.relationMoE Tier 1 2017-1-002-200en_US
dc.relationA18A4b0055en_US
dc.relation.ispartofAIP Advancesen_US
dc.rights© 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleEffects of precursors' purity on graphene quality : synthesis and thermoelectric effecten_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1063/1.5142310-
dc.description.versionPublished versionen_US
dc.identifier.scopus2-s2.0-85083630357-
dc.identifier.issue4en_US
dc.identifier.volume10en_US
dc.identifier.epage045016en_US
dc.subject.keywordsChemical Vapor Depositionen_US
dc.subject.keywordsDefectsen_US
item.grantfulltextopen-
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