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https://hdl.handle.net/10356/143154
Title: | Control of the metal-to-insulator transition by substrate orientation in nickelates | Authors: | Peng, Jingjing Ouyang, Bin Liu, H. Y. Hao, Changshan Tang, S. S. Gu, Y. D. Yan, Y. |
Keywords: | Science::Physics | Issue Date: | 2019 | Source: | Peng, J., Ouyang, B., Liu, H. Y., Hao, C., Tang, S. S., Gu, Y. D., & Yan, Y. (2019). Control of the metal-to-insulator transition by substrate orientation in nickelates. AIP Advances, 9(10), 105118-. doi:10.1063/1.5125942 | Journal: | AIP Advances | Abstract: | We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer. | URI: | https://hdl.handle.net/10356/143154 | ISSN: | 2158-3226 | DOI: | 10.1063/1.5125942 | Schools: | School of Physical and Mathematical Sciences | Rights: | © 2019 The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | SPMS Journal Articles |
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Control of the metal-to-insulator transition by substrate orientation in nickelates.pdf | 3.41 MB | Adobe PDF | ![]() View/Open |
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