Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143154
Title: Control of the metal-to-insulator transition by substrate orientation in nickelates
Authors: Peng, Jingjing
Ouyang, Bin
Liu, H. Y.
Hao, Changshan
Tang, S. S.
Gu, Y. D.
Yan, Y.
Keywords: Science::Physics
Issue Date: 2019
Source: Peng, J., Ouyang, B., Liu, H. Y., Hao, C., Tang, S. S., Gu, Y. D., & Yan, Y. (2019). Control of the metal-to-insulator transition by substrate orientation in nickelates. AIP Advances, 9(10), 105118-. doi:10.1063/1.5125942
Journal: AIP Advances
Abstract: We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer.
URI: https://hdl.handle.net/10356/143154
ISSN: 2158-3226
DOI: 10.1063/1.5125942
Rights: © 2019 The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

Files in This Item:
File Description SizeFormat 
Control of the metal-to-insulator transition by substrate orientation in nickelates.pdf3.41 MBAdobe PDFView/Open

Page view(s)

156
Updated on Oct 4, 2022

Download(s) 50

26
Updated on Oct 4, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.