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dc.contributor.authorNarasimman, Govinden_US
dc.contributor.authorBasu, Joydeepen_US
dc.contributor.authorSethi, Pankajen_US
dc.contributor.authorKrishnia, Sachinen_US
dc.contributor.authorYi, Chenen_US
dc.contributor.authorLew, Wen Siangen_US
dc.contributor.authorBasu, Arindamen_US
dc.identifier.citationNarasimman, G., Basu, J., Sethi, P., Krishnia, S., Yi, C., Lew, W. S., & Basu, A. (2020). A 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generator. IEEE Sensors Journal, 20(14), 7810-7818. doi:10.1109/JSEN.2020.2980021en_US
dc.description.abstractWe present a novel readout circuit for a ferromagnetic Hall cross-bar based random number generator. The random orientation of magnetic domains are result of anomalous Hall-effect. These ferromagnetic Hall cross-bar structures can be integrated with the read out circuit to form a plug and play random number generator. The system can resolve up to 15-20 μV Hall-voltages from Hall probe. Application of current densities around 10 12 A/m 2 through the Ferromagnetic Hall cross-bar produces random Hall-voltage on the output terminals. To amplify the weak Hall-voltages (10-100 μV) in the presence of DC offsets, a modulation scheme is used to up-convert the signal and a band-pass amplifier is used to amplify the modulated signal. The bandpass amplifier circuit, motivated by neural recording amplifier is designed in 65nm CMOS and consumes 126 μW of power from a 1.2 V supply. Further, we present a successive approximation algorithm and its embedded implementation to set the desired threshold for digitizing the amplified Hall-voltage in presence of signal drift. Experimental results show that the resulting system can tolerate drifts in voltage up to 440 μV.en_US
dc.relation.ispartofIEEE Sensors Journalen_US
dc.rights© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleA 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generatoren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionAccepted versionen_US
dc.subject.keywordsRandom Number Generationen_US
dc.subject.keywordsLow-power Electronicsen_US
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