Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143428
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dc.contributor.authorGhosh, Soumavaen_US
dc.contributor.authorLin, Kuan-Chihen_US
dc.contributor.authorTsai, Cheng-Hsunen_US
dc.contributor.authorKumar, Harshvardhanen_US
dc.contributor.authorChen, Qimiaoen_US
dc.contributor.authorZhang, Linen_US
dc.contributor.authorSon, Bongkwonen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.contributor.authorKim, Munhoen_US
dc.contributor.authorMukhopadhyay, Bratatien_US
dc.contributor.authorChang, Guo-Enen_US
dc.date.accessioned2020-09-01T02:50:08Z-
dc.date.available2020-09-01T02:50:08Z-
dc.date.issued2020-
dc.identifier.citationGhosh, S., Lin, K.-C., Tsai, C.-H., Kumar, H., Chen, Q., Zhang, L., ... Chang, G.-E. (2020). Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications. Micromachines, 11(9), 795-. doi:10.3390/mi11090795en_US
dc.identifier.issn2072-666Xen_US
dc.identifier.urihttps://hdl.handle.net/10356/143428-
dc.description.abstractMetal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-CRP19-2017-01en_US
dc.relation.ispartofMicromachinesen_US
dc.rights© 2020 by The Authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.subjectEngineering::Electrical and electronic engineering::Semiconductorsen_US
dc.subjectEngineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleMetal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applicationsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.3390/mi11090795-
dc.description.versionPublished versionen_US
dc.identifier.issue9en_US
dc.identifier.volume11en_US
dc.identifier.spage795en_US
dc.subject.keywordsGermaniumen_US
dc.subject.keywordsPhotodetectoren_US
dc.description.acknowledgementNational Research Foundation Singapore Competitive Research Programme under Grant NRF-CRP19-2017-01.en_US
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