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Title: Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
Authors: Ghosh, Soumava
Lin, Kuan-Chih
Tsai, Cheng-Hsun
Kumar, Harshvardhan
Chen, Qimiao
Zhang, Lin
Son, Bongkwon
Tan, Chuan Seng
Kim, Munho
Mukhopadhyay, Bratati
Chang, Guo-En
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2020
Source: Ghosh, S., Lin, K.-C., Tsai, C.-H., Kumar, H., Chen, Q., Zhang, L., ... Chang, G.-E. (2020). Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications. Micromachines, 11(9), 795-. doi:10.3390/mi11090795
Project: NRF-CRP19-2017-01
Journal: Micromachines
Abstract: Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.
ISSN: 2072-666X
DOI: 10.3390/mi11090795
Schools: School of Electrical and Electronic Engineering 
Rights: © 2020 by The Authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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