Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143486
Title: Cu-Cu bonding in ambient environment by Ar/N 2 plasma surface activation and its characterization
Authors: Chua, Shen Lin
Chan, Marvin Jiawei
Goh, Simon Chun Kiat
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Chua, S. L., Chan, M. J., Goh, S. C. K., & Tan, C. S. (2019). Cu-Cu bonding in ambient environment by Ar/N 2 plasma surface activation and its characterization. IEEE Transactions on Components, Packaging and Manufacturing Technology, 9(3), 596–605. doi:10.1109/TCPMT.2018.2875460
Project: 10.13039/501100001348
Journal: IEEE Transactions on Components, Packaging and Manufacturing Technology
Abstract: Ar/N 2 plasma surface activation in ambient environment for Cu-Cu bonding has been performed and characterized. Cu-Cu bonding occurs at room temperature and under normal atmospheric conditions. Postbonding annealing is performed at 300 °C and below to control the overall thermal budget. Shear strength and hermeticity property of samples with varying annealing temperature are investigated. Samples annealed at 250 °C demonstrate the highest average shear strength of 20.3 MPa and the lowest average helium leak rate of 8.7×10 -9 atm cc/s. Daisy chain structures are used to examine the electrical property of sample bonded at 300 °C, and the temperature cycling tests from -40 °C to 125 °C for 1000 cycles have been performed for the reliability assessment. It is observed that the dies are well-bonded and intact after 1000 cycles even though the exposed Cu surface is heavily oxidized.
URI: https://hdl.handle.net/10356/143486
ISSN: 2156-3950
DOI: 10.1109/TCPMT.2018.2875460
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCPMT.2018.2875460
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations

5
checked on Sep 4, 2020

WEB OF SCIENCETM
Citations 50

3
checked on Oct 29, 2020

Page view(s) 50

19
checked on Oct 31, 2020

Download(s) 50

4
checked on Oct 31, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.