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Title: Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors
Authors: Ghosh, Soumava
Lin, Kuan-Chih
Tsai, Cheng-Hsun
Lee, Kwang Hong
Chen, Qimiao
Son, Bongkwon
Mukhopadhyay, Bratati
Tan, Chuan Seng
Chang, Guo-En
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Ghosh, S., Lin, K.-C., Tsai, C.-H., Lee, K. H., Chen, Q., Son, B., ... Chang, G.-E. (2020). Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors. Optics Express, 28(16), 23739-23747. doi:10.1364/OE.398046
Project: NRF-CRP19-2017-01
Journal: Optics Express 
Abstract: The germanium-on-insulator (GOI) has recently emerged as a new platform for complementary metal-oxide-semiconductor (CMOS)-compatible photonic integrated circuits. Here we report on resonant-cavity-enhanced optical responses in Ge photodetectors on a GOI platform where conventional photodetection is difficult. A 0.16% tensile strain is introduced to the high-quality Ge active layer to extend the photodetection range to cover the entire range of telecommunication C- and L-bands (1530-1620 nm). A carefully designed vertical cavity is created utilizing the insulator layer and the deposited SiO2 layer to enhance the optical confinement and thus optical response near the direct-gap absorption edge. Experimental results show a responsivity peak at 1590 nm, confirming the resonant cavity effect. Theoretical analysis shows that the optical responsivity in the C- and L-bands is significantly enhanced. Thus, we have demonstrated a new type of Ge photodetector on a GOI platform for CMOS-compatible photonic integrated circuits for telecommunication applications.
ISSN: 1094-4087
DOI: 10.1364/OE.398046
Rights: © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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