Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143501
Title: High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Authors: Son, Bongkwon
Lin, Yiding
Lee, Kwang Hong
Wang, Yue
Wu, Shaoteng
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Son, B., Lin, Y., Lee, K. H., Wang, Y., Wu, S., & Tan, C. S. (2020). High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation. Optics Express, 28(16), 23978-23990. doi:10.1364/OE.398199
Journal: Optics Express 
Abstract: Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at -1 V. A germanium-on-insulator (GOI) platform with a 200-mm wafer scale was realized for photodetector fabrication via direct wafer bonding and layer transfer techniques, followed by oxygen annealing in finance. A thin germanium-oxide (GeOx) layer was formed on the sidewall of photodetectors by ozone oxidation to suppress surface leakage current. The responsivity of the vertical p-i-n annealed GOI photodetectors was revealed to be 0.42 and 0.28 A/W at 1,500 and 1,550 nm at -1 V, respectively. The photodetector characteristics are investigated in comparison with photodetectors with SiO2 surface passivation. The surface leakage current is reduced by a factor of 10 for photodetectors via ozone oxidation. The 3dB bandwidth of 1.72 GHz at -1 V for GeOx surface-passivated photodetectors is enhanced by approximately 2 times compared to the one for SiO2 surface-passivated photodetectors. The 3dB bandwidth is theoretically expected to further enhance to ∼70 GHz with a 5 µm mesa diameter.
URI: https://hdl.handle.net/10356/143501
ISSN: 1094-4087
DOI: 10.1364/OE.398199
Rights: © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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