Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143501
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSon, Bongkwonen_US
dc.contributor.authorLin, Yidingen_US
dc.contributor.authorLee, Kwang Hongen_US
dc.contributor.authorWang, Yueen_US
dc.contributor.authorWu, Shaotengen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.date.accessioned2020-09-07T01:17:30Z-
dc.date.available2020-09-07T01:17:30Z-
dc.date.issued2020-
dc.identifier.citationSon, B., Lin, Y., Lee, K. H., Wang, Y., Wu, S., & Tan, C. S. (2020). High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation. Optics Express, 28(16), 23978-23990. doi:10.1364/OE.398199en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttps://hdl.handle.net/10356/143501-
dc.description.abstractGermanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at -1 V. A germanium-on-insulator (GOI) platform with a 200-mm wafer scale was realized for photodetector fabrication via direct wafer bonding and layer transfer techniques, followed by oxygen annealing in finance. A thin germanium-oxide (GeOx) layer was formed on the sidewall of photodetectors by ozone oxidation to suppress surface leakage current. The responsivity of the vertical p-i-n annealed GOI photodetectors was revealed to be 0.42 and 0.28 A/W at 1,500 and 1,550 nm at -1 V, respectively. The photodetector characteristics are investigated in comparison with photodetectors with SiO2 surface passivation. The surface leakage current is reduced by a factor of 10 for photodetectors via ozone oxidation. The 3dB bandwidth of 1.72 GHz at -1 V for GeOx surface-passivated photodetectors is enhanced by approximately 2 times compared to the one for SiO2 surface-passivated photodetectors. The 3dB bandwidth is theoretically expected to further enhance to ∼70 GHz with a 5 µm mesa diameter.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relation.ispartofOptics Expressen_US
dc.rights© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en_US
dc.subjectEngineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleHigh speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivationen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1364/OE.398199-
dc.description.versionPublished versionen_US
dc.identifier.pmid32752385-
dc.identifier.scopus2-s2.0-85089131914-
dc.identifier.issue16en_US
dc.identifier.volume28en_US
dc.identifier.spage23978en_US
dc.identifier.epage23990en_US
dc.subject.keywordsGermaniumen_US
dc.subject.keywordsPhotodetectoren_US
dc.description.acknowledgementNational Research Foundation Singapore Competitive Research Programme (NRF-CRP19-2017- 01).en_US
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations 50

1
Updated on Mar 10, 2021

PublonsTM
Citations 50

1
Updated on Mar 8, 2021

Page view(s)

189
Updated on Jul 5, 2022

Download(s) 50

92
Updated on Jul 5, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.