Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143560
Full metadata record
DC FieldValueLanguage
dc.contributor.authorPark, Hyo Juen_US
dc.contributor.authorTay, Roland Yingjieen_US
dc.contributor.authorWang, Xiaoen_US
dc.contributor.authorZhao, Wenen_US
dc.contributor.authorKim, Jung Hwaen_US
dc.contributor.authorRuoff, Rodney S.en_US
dc.contributor.authorDing, Fengen_US
dc.contributor.authorTeo, Edwin Hang Tongen_US
dc.contributor.authorLee, Zonghoonen_US
dc.date.accessioned2020-09-09T05:43:27Z-
dc.date.available2020-09-09T05:43:27Z-
dc.date.issued2019-
dc.identifier.citationPark, H. J., Tay, R. Y., Wang, X., Zhao, W., Kim, J. H., Ruoff, R. S., . . . Lee, Z. (2019). Double-spiral hexagonal boron nitride and shear strained coalescence boundary. Nano Letters, 19(7), 4229-4236. doi:10.1021/acs.nanolett.8b05034en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttps://hdl.handle.net/10356/143560-
dc.description.abstractAmong the different growth mechanisms for two-dimensional (2D) hexagonal boron nitride (h-BN) synthesized using chemical vapor deposition, spiraling growth of h-BN has not been reported. Here we report the formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations located at the antiphase boundaries of monolayer domains. The microstructure and stacking configurations were studied using a combination of dark-field and atomic resolution transmission electron microscopy. Distinct from other 2D materials with single-spiral structures, the double-spiral structure enables the intertwined h-BN layers to preserve the most stable AA′ stacking configuration. We also found that the occurrence of shear strains at the boundaries of merged spiral islands is dependent on the propagation directions of encountering screw dislocations and presented the strained features by density functional theory calculations and atomic image simulations. This study unveils the double-spiral growth of 2D h-BN multilayers and the creation of a shear strain band at the coalescence boundary of two h-BN spiral clusters.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relation.ispartofNano lettersen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.8b05034en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleDouble-spiral hexagonal boron nitride and shear strained coalescence boundaryen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.researchTemasek Laboratoriesen_US
dc.identifier.doi10.1021/acs.nanolett.8b05034-
dc.description.versionAccepted versionen_US
dc.identifier.pmid30844285-
dc.identifier.issue7en_US
dc.identifier.volume19en_US
dc.identifier.spage4229en_US
dc.identifier.epage4236en_US
dc.subject.keywordsHexagonal Boron Nitrideen_US
dc.subject.keywordsGrowth Mechanismen_US
dc.description.acknowledgementThis work was supported by IBS-R019-D1, the National Research Foundation (NRF) grant funded by the Korea government (MSIT) (2018R1A2A2A05019598), and the NRF-ANR Joint (NRF2016-NRF-ANR001).en_US
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary.pdf3.18 MBAdobe PDFThumbnail
View/Open

SCOPUSTM   
Citations 20

15
Updated on Jul 14, 2024

Web of ScienceTM
Citations 20

13
Updated on Oct 29, 2023

Page view(s)

285
Updated on Jul 18, 2024

Download(s) 20

220
Updated on Jul 18, 2024

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.