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dc.contributor.authorPark, Hyo Juen_US
dc.contributor.authorTay, Roland Yingjieen_US
dc.contributor.authorWang, Xiaoen_US
dc.contributor.authorZhao, Wenen_US
dc.contributor.authorKim, Jung Hwaen_US
dc.contributor.authorRuoff, Rodney S.en_US
dc.contributor.authorDing, Fengen_US
dc.contributor.authorTeo, Edwin Hang Tongen_US
dc.contributor.authorLee, Zonghoonen_US
dc.identifier.citationPark, H. J., Tay, R. Y., Wang, X., Zhao, W., Kim, J. H., Ruoff, R. S., . . . Lee, Z. (2019). Double-spiral hexagonal boron nitride and shear strained coalescence boundary. Nano Letters, 19(7), 4229-4236. doi:10.1021/acs.nanolett.8b05034en_US
dc.description.abstractAmong the different growth mechanisms for two-dimensional (2D) hexagonal boron nitride (h-BN) synthesized using chemical vapor deposition, spiraling growth of h-BN has not been reported. Here we report the formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations located at the antiphase boundaries of monolayer domains. The microstructure and stacking configurations were studied using a combination of dark-field and atomic resolution transmission electron microscopy. Distinct from other 2D materials with single-spiral structures, the double-spiral structure enables the intertwined h-BN layers to preserve the most stable AA′ stacking configuration. We also found that the occurrence of shear strains at the boundaries of merged spiral islands is dependent on the propagation directions of encountering screw dislocations and presented the strained features by density functional theory calculations and atomic image simulations. This study unveils the double-spiral growth of 2D h-BN multilayers and the creation of a shear strain band at the coalescence boundary of two h-BN spiral clusters.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relation.ispartofNano lettersen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleDouble-spiral hexagonal boron nitride and shear strained coalescence boundaryen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.researchTemasek Laboratoriesen_US
dc.description.versionAccepted versionen_US
dc.subject.keywordsHexagonal Boron Nitrideen_US
dc.subject.keywordsGrowth Mechanismen_US
dc.description.acknowledgementThis work was supported by IBS-R019-D1, the National Research Foundation (NRF) grant funded by the Korea government (MSIT) (2018R1A2A2A05019598), and the NRF-ANR Joint (NRF2016-NRF-ANR001).en_US
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