Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143567
Title: Silicon-on-insulator free-carrier injection modulators for the mid-infrared
Authors: Nedeljkovic, Milos
Littlejohns, Callum George
Khokhar, Ali Z.
Banakar, Mehdi
Cao, Wei
Penades, Jordi Soler
Tran, David T.
Gardes, Frederic Y.
Thomson, David J.
Reed, Graham T.
Wang, Hong
Mashanovich, Goran Z.
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Nedeljkovic, M., Littlejohns, C. G., Khokhar, A. Z., Banakar, M., Cao, W., Penades, J. S., . . . Mashanovich, G. Z. (2019). Silicon-on-insulator free-carrier injection modulators for the mid-infrared. Optics Letters, 44(4), 915-918. doi:10.1364/OL.44.000915
Journal: Optics Letters
Abstract: Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VπLπ of 0.052  V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.
URI: https://hdl.handle.net/10356/143567
ISSN: 0146-9592
DOI: 10.1364/OL.44.000915
Rights: © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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