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|Title:||Silicon-on-insulator free-carrier injection modulators for the mid-infrared||Authors:||Nedeljkovic, Milos
Littlejohns, Callum George
Khokhar, Ali Z.
Penades, Jordi Soler
Tran, David T.
Gardes, Frederic Y.
Thomson, David J.
Reed, Graham T.
Mashanovich, Goran Z.
|Keywords:||Engineering::Electrical and electronic engineering||Issue Date:||2019||Source:||Nedeljkovic, M., Littlejohns, C. G., Khokhar, A. Z., Banakar, M., Cao, W., Penades, J. S., . . . Mashanovich, G. Z. (2019). Silicon-on-insulator free-carrier injection modulators for the mid-infrared. Optics Letters, 44(4), 915-918. doi:10.1364/OL.44.000915||Journal:||Optics Letters||Abstract:||Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VπLπ of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.||URI:||https://hdl.handle.net/10356/143567||ISSN:||0146-9592||DOI:||10.1364/OL.44.000915||Rights:||© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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