Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBerco, Danen_US
dc.contributor.authorZhou, Yuen_US
dc.contributor.authorGollu, Sankara Raoen_US
dc.contributor.authorKalaga, Pranav Sairamen_US
dc.contributor.authorKole, Abhiseken_US
dc.contributor.authorMohamed Hassanen_US
dc.contributor.authorAng, Diing Shenpen_US
dc.identifier.citationBerco, D., Zhou, Y., Gollu, S. R., Kalaga, P. S., Kole, A., Mohamed Hassan, & Ang, D. S. (2018). Nanoscale conductive filament with alternating rectification as an artificial synapse building block. ACS Nano, 12(6), 5946-5955. doi:10.1021/acsnano.8b02193en_US
dc.description.abstractA popular approach for resistive memory (RRAM)-based hardware implementation of neural networks utilizes one (or two) device that functions as an analog synapse in a crossbar structure of perpendicular pre- and postsynaptic neurons. An ideal fully automated, large-scale artificial neural network, which matches a biologic counterpart (in terms of density and energy consumption), thus requires nanosized, extremely low power devices with a wide dynamic range and multilevel functionality. Unfortunately the trade-off between these traits proves to be a serious obstacle in the realization of brain-inspired computing platforms yet to be overcome. This study demonstrates an alternative manner for the implementation of artificial synapses in which the local stoichiometry of metal oxide materials is delicately manipulated to form a single nanoscale conductive filament that may be used as a synaptic gap building block in an equivalent manner to the functionality of a single connexon (a signaling pore between synapses) with dynamic rectification direction. The structure, of a few nanometers in size, is based on the formation of defect states and shows current rectification properties that can be consecutively flipped to a forward or reverse direction to create either an excitatory or inhibitory (positive or negative) weight parameter. Alternatively, a plurality of these artificial connexons may be used to create a synthetic rectifying synaptic gap junction. In addition, the junction plasticity may be altered in a differential digital scheme (opposed to conventional analog RRAM conductivity manipulation) by changing the ratio of forward to reverse rectifying connexons.en_US
dc.relation.ispartofACS Nanoen_US
dc.rights© 2018 American Chemical Society. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleNanoscale conductive filament with alternating rectification as an artificial synapse building blocken_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.subject.keywordsSynaptic Gap Junctionsen_US
dc.subject.keywordsElectrical Synapsesen_US
item.fulltextNo Fulltext-
Appears in Collections:EEE Journal Articles

Citations 20

Updated on Mar 18, 2023

Web of ScienceTM
Citations 10

Updated on Mar 24, 2023

Page view(s)

Updated on Mar 21, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.