Please use this identifier to cite or link to this item:
Title: Stacking-dependent interlayer phonons in 3R and 2H MoS2
Authors: Van Baren, Jeremiah
Ye, Gaihua
Yan, Jia-An
Ye, Zhipeng
Rezaie, Pouyan
Yu, Peng
Liu, Zheng
He, Rui
Lui, Chun Hung
Keywords: Engineering::Materials
Issue Date: 2019
Source: Van Baren, J., Ye, G., Yan, J.-A., Ye, Z., Rezaie, P., Yu, P., . . . Lui, C. H. (2019). Stacking-dependent interlayer phonons in 3R and 2H MoS2. 2D Materials, 6(2), 025022-. doi:10.1088/2053-1583/ab0196
Journal: 2D Materials 
Abstract: We have investigated the interlayer shear and breathing phonon modes in MoS2 with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four breathing branches in MoS2 with thickness from 2 to 13 layers. The breathing modes show the same Raman activity behavior for both polytypes, but the 2H breathing frequencies are consistently several wavenumbers higher than the 3R breathing frequencies, signifying that 2H MoS2 has slightly stronger interlayer lattice coupling than 3R MoS2. In contrast, the shear-mode Raman spectra are strikingly different for 2H and 3R MoS2. While the strongest shear mode corresponds to the highest-frequency branch in the 2H structure, it corresponds to the lowest-frequency branch in the 3R structure. Such distinct and complementary Raman spectra of the 3R and 2H polytypes allow us to survey a broad range of shear modes in MoS2, from the highest to lowest branch. By combining the linear chain model, group theory, effective bond polarizability model and first-principles calculations, we can account for all the major observations in our experiment.
ISSN: 2053-1583
DOI: 10.1088/2053-1583/ab0196
Schools: School of Materials Science and Engineering 
Rights: © 2019 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

Files in This Item:
File Description SizeFormat 
Stacking-Dependent Interlayer Phonons in 3R and 2H MoS2.pdf4.52 MBAdobe PDFThumbnail

Citations 10

Updated on Nov 29, 2023

Web of ScienceTM
Citations 10

Updated on Oct 28, 2023

Page view(s)

Updated on Dec 8, 2023

Download(s) 50

Updated on Dec 8, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.