Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143719
Title: Insights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayers
Authors: Wu, Shaoteng
Zhang, Lin
Son, Bongkwon
Chen, Qimiao
Zhou, Hao
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Wu, S., Zhang, L., Son, B., Chen, Q., Zhou, H., & Tan, C. S. (2020). Insights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayers. The Journal of Physical Chemistry C, 124(37), 20035–20045. doi:10.1021/acs.jpcc.0c03820
Project: NRF–CRP19–2017–01
2019-T1-002-040
Journal: The Journal of Physical Chemistry C
Abstract: We demonstrate the self-assembly synthesis of millimetre-long guided trenches and micro-holes/rings in the supersaturated GeSn epilayers through two approaches: epitaxial growth engineering and thermal annealing treatment. It reveals that the ordered trenches originate from a central nucleation point which typically accompanied by micro-hole/ring formation. These trenches are caused by the migration of Sn droplets on the film surface with the orientation dominantly along <100> or <110>axis, determined by the Sn-content of the epilayers and formation temperature. The holes/rings are postulated to be caused by the local droplet etching due to the development of Ge-Sn eutectic. The morphological and compositional evolution of the Sn-segregation is characterized by the combination of optical and electronic microscopy, spectroscopy, and atomic force microscope measurements. This work provides a comprehensive understanding of the mechanism for the Sn segregation in GeSn and suggests the new degree of freedom to the growth and engineering of droplet-assisted micro-structures.
URI: https://hdl.handle.net/10356/143719
ISSN: 1932-7447
DOI: 10.1021/acs.jpcc.0c03820
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.0c03820
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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