Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/143719
Title: | Insights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayers | Authors: | Wu, Shaoteng Zhang, Lin Son, Bongkwon Chen, Qimiao Zhou, Hao Tan, Chuan Seng |
Keywords: | Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2020 | Source: | Wu, S., Zhang, L., Son, B., Chen, Q., Zhou, H., & Tan, C. S. (2020). Insights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayers. The Journal of Physical Chemistry C, 124(37), 20035–20045. doi:10.1021/acs.jpcc.0c03820 | Project: | NRF–CRP19–2017–01 2019-T1-002-040 |
Journal: | The Journal of Physical Chemistry C | Abstract: | We demonstrate the self-assembly synthesis of millimetre-long guided trenches and micro-holes/rings in the supersaturated GeSn epilayers through two approaches: epitaxial growth engineering and thermal annealing treatment. It reveals that the ordered trenches originate from a central nucleation point which typically accompanied by micro-hole/ring formation. These trenches are caused by the migration of Sn droplets on the film surface with the orientation dominantly along <100> or <110>axis, determined by the Sn-content of the epilayers and formation temperature. The holes/rings are postulated to be caused by the local droplet etching due to the development of Ge-Sn eutectic. The morphological and compositional evolution of the Sn-segregation is characterized by the combination of optical and electronic microscopy, spectroscopy, and atomic force microscope measurements. This work provides a comprehensive understanding of the mechanism for the Sn segregation in GeSn and suggests the new degree of freedom to the growth and engineering of droplet-assisted micro-structures. | URI: | https://hdl.handle.net/10356/143719 | ISSN: | 1932-7447 | DOI: | 10.1021/acs.jpcc.0c03820 | Schools: | School of Electrical and Electronic Engineering | Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.0c03820 | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Manuscript paper.pdf | 1.6 MB | Adobe PDF | ![]() View/Open |
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