Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143719
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dc.contributor.authorWu, Shaotengen_US
dc.contributor.authorZhang, Linen_US
dc.contributor.authorSon, Bongkwonen_US
dc.contributor.authorChen, Qimiaoen_US
dc.contributor.authorZhou, Haoen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.date.accessioned2020-09-18T07:11:40Z-
dc.date.available2020-09-18T07:11:40Z-
dc.date.issued2020-
dc.identifier.citationWu, S., Zhang, L., Son, B., Chen, Q., Zhou, H., & Tan, C. S. (2020). Insights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayers. The Journal of Physical Chemistry C, 124(37), 20035–20045. doi:10.1021/acs.jpcc.0c03820en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttps://hdl.handle.net/10356/143719-
dc.description.abstractWe demonstrate the self-assembly synthesis of millimetre-long guided trenches and micro-holes/rings in the supersaturated GeSn epilayers through two approaches: epitaxial growth engineering and thermal annealing treatment. It reveals that the ordered trenches originate from a central nucleation point which typically accompanied by micro-hole/ring formation. These trenches are caused by the migration of Sn droplets on the film surface with the orientation dominantly along <100> or <110>axis, determined by the Sn-content of the epilayers and formation temperature. The holes/rings are postulated to be caused by the local droplet etching due to the development of Ge-Sn eutectic. The morphological and compositional evolution of the Sn-segregation is characterized by the combination of optical and electronic microscopy, spectroscopy, and atomic force microscope measurements. This work provides a comprehensive understanding of the mechanism for the Sn segregation in GeSn and suggests the new degree of freedom to the growth and engineering of droplet-assisted micro-structures.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF–CRP19–2017–01en_US
dc.relation2019-T1-002-040en_US
dc.relation.ispartofThe Journal of Physical Chemistry Cen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.0c03820en_US
dc.subjectEngineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleInsights into the origins of guided microtrenches and microholes/rings from Sn segregation in germanium–tin epilayersen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1021/acs.jpcc.0c03820-
dc.description.versionAccepted versionen_US
dc.identifier.issue37en_US
dc.identifier.volume124en_US
dc.identifier.spage20035en_US
dc.identifier.epage20045en_US
dc.subject.keywordsGermaniumen_US
dc.subject.keywordsTinen_US
dc.description.acknowledgementThis work was support by the National Research Foundation Singapore Competitive Research Programme under Grant NRF–CRP19–2017–01 and Ministry of Education Tier-1 Project under Grant 2019-T1-002-040.en_US
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