Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143723
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dc.contributor.authorLi, Yuanen_US
dc.contributor.authorSong, Zhigangen_US
dc.contributor.authorLi, Zeyuen_US
dc.contributor.authorSun, Gregen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.contributor.authorFan, Weijunen_US
dc.contributor.authorWang, Qi Jieen_US
dc.date.accessioned2020-09-21T01:57:55Z-
dc.date.available2020-09-21T01:57:55Z-
dc.date.issued2020-
dc.identifier.citationLi, Y., Song, Z., Li, Z., Sun, G., Tan, C. S., Fan, W., & Wang, Q. J. (2020). Theoretical design of mid-infrared interband cascade lasers in SiGeSn system. New Journal of Physics, 22. doi:10.1088/1367-2630/ab9c67en_US
dc.identifier.issn1367-2630en_US
dc.identifier.urihttps://hdl.handle.net/10356/143723-
dc.description.abstractBy carefully analyzing the latest composition-dependent parameters of SiGeSn alloys, we come to realize that this system could provide type-II energy band alignment at direct bandgap condition. The discovery inspires us to explore the mid-infrared interband cascade laser (ICL) in SiGeSn system. Based on the eight-band k ⋅ p model, we theoretically design three schemes of ICL, in which the active region and the carrier injectors are optimized simultaneously. Afterward, the properties of TE-mode optical gain spectrums and differential gain are investigated individually for each scheme. Furthermore, the spontaneous emission spectrums and radiative current density are also calculated. Our theoretical results indicate that the active region composed of double-electron and triple-hole quantum wells has the best gain performance, reaching 660 cm−1 for a single period of the ICL under 7.8 × 1018 cm−3 injected electron density. This work opens up another type of infrared lasers that can be developed from the group-IV system, offering a new pathway to achieving the monolithic integration in Si photonics.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-CRP19-2017-01en_US
dc.relationMOE2016-T2-2-159en_US
dc.relationMOE2018-T2-1-176en_US
dc.relation.ispartofNew Journal of Physicsen_US
dc.rights© 2020 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleTheoretical design of mid-infrared interband cascade lasers in SiGeSn systemen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1088/1367-2630/ab9c67-
dc.description.versionPublished versionen_US
dc.identifier.volume22en_US
dc.subject.keywordsPhotonicsen_US
dc.subject.keywordsInterband Cascade Laseren_US
dc.description.acknowledgementThis work is supported by the funding from Singapore National Research Foundation, Competitive Research Program (NRF-CRP19-2017-01). Greg Sun acknowledges the support from Air Force Office of Scientific Research (FA9550-19-1-0341). WJ Fan acknowledges the National Supercomputing Center of Singapore for the calculation resource support.en_US
dc.description.acknowledgementMinistry of Education, Singapore grant (MOE2016-T2-2-159, MOE2018-T2-1-176)en_US
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