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Title: Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model
Authors: Song, Zhigang
Fan, Weijun
Tan, Chuan Seng
Wang, Qijie
Nam, Donguk
Zhang, Dao Hua
Sun, Greg
Keywords: Engineering::Materials
Issue Date: 2020
Source: Song, Z., Fan, W., Tan, C. S., Wang, Q., Nam, D., Zhang, D. H., & Sun, G. (2020). Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model. IEEE Journal of Quantum Electronics, 56(1), 7100208-. doi:10.1109/JQE.2019.2947710
Journal: IEEE Journal of Quantum Electronics
Abstract: We extend the previous 30-band k· p model effectively employed for relaxed Ge1−xSnx alloy to the case of strained Ge1−xSnx alloy. The strain-relevant parameters for the 30-band k· p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of bandgap at L-valley and -valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band k· p model and relevant input parameters successfully applied to relaxed and strained Ge1−xSnx alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy.
ISSN: 0018-9197
DOI: 10.1109/JQE.2019.2947710
Rights: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, in any current or future media, including reprinting/republishing this material for adverstising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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