Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/143754
Title: Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons
Authors: Dubrovkin, Alexander M.
Qiang, Bo
Salim, Teddy
Nam, Donguk
Zheludev, Nikolay I.
Wang, Qi Jie
Keywords: Engineering::Materials
Issue Date: 2020
Source: Dubrovkin, A. M., Qiang, B., Salim, T., Nam, D., Zheludev, N. I., & Wang, Q. J. (2020). Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons. Nature Communications, 11(1), 1863-. doi:10.1038/s41467-020-15767-y
Project: MOE2016-T3-1-006 (S)
NRF-CRP18-2017-02
NRF–CRP19–2017–01
Journal: Nature Communications
Abstract: Plasmonics on metal-dielectric interfaces was widely seen as the main route for miniaturization of components and interconnect of photonic circuits. However recently, ultra-confined surface phonon-polaritonics in high-index chalcogenide films of nanometric thickness has emerged as an important alternative to plasmonics. Here, using mid-IR near-field imaging we demonstrate tunable surface phonon-polaritons in CMOS-compatible interfaces of few-nm thick germanium on silicon carbide. We show that Ge-SiC resonators with nanoscale footprint can support sheet and edge surface modes excited at the free space wavelength hundred times larger than their physical dimensions. Owing to the surface nature of the modes, the sensitivity of real-space polaritonic patterns provides pathway for local detection of the interface composition change at sub-nanometer level. Such deeply subwavelength resonators are of interest for high-density optoelectronic applications, filters, dispersion control and optical delay devices.
URI: https://hdl.handle.net/10356/143754
ISSN: 2041-1723
DOI: 10.1038/s41467-020-15767-y
Rights: © 2020 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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