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|Title:||High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection||Authors:||Lukman, Steven
Riis-Jensen, Anders C.
Wu, Steve Qing Yang
Thygesen, Kristian S.
Wang, Qi Jie
|Keywords:||Engineering::Electrical and electronic engineering||Issue Date:||2020||Source:||Lukman, S., Ding, L., Xu, L., Tao, Y., Riis-Jensen, A. C., Zhang, G., . . . Teng, J. (2020). High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection. Nature Nanotechnology, 15(8), 675-682. doi:10.1038/s41565-020-0717-2||Project:||NRF-CRP18-2017-02
|Journal:||Nature Nanotechnology||Abstract:||The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III-V and II-VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we demonstrate infrared photodetection enabled by interlayer excitons (ILEs) generated between tungsten and hafnium disulfide, WS2/HfS2. The photodetector operates at room temperature and shows an even higher performance at higher temperatures owing to the large exciton binding energy and phonon-assisted optical transition. The unique band alignment in the WS2/HfS2 heterostructure allows interlayer bandgap tuning from the mid- to long-wave infrared spectrum. We postulate that the sizeable charge delocalization and ILE accumulation at the interface result in a greatly enhanced oscillator strength of the ILEs and a high responsivity of the photodetector. The sensitivity of ILEs to the thickness of two-dimensional materials and the external field provides an excellent platform to realize robust tunable room temperature infrared photodetectors.||URI:||https://hdl.handle.net/10356/144025||ISSN:||1748-3387||DOI:||10.1038/s41565-020-0717-2||Rights:||© 2020 Macmillan Publishers Limited, part of Springer Nature. All rights reserved. This paper was published in Nature Nanotechnology and is made available with permission of Macmillan Publishers Limited, part of Springer Nature.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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