Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144085
Title: Leakage current conduction mechanism in 3D capacitor embedded in Through-Silicon Via (TSV)
Authors: Lin, Ye
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2017
Source: Lin, Y., & Tan, C. S. (2020). Leakage current conduction mechanism in 3D capacitor embedded in Through-Silicon Via (TSV). Advanced Metallization Conference 2017.
Project: A1783c0004
Abstract: In this paper, we investigated leakage current conduction mechanism in 3D capacitors embedded in TSVs. Two sets of test vehicles, 400 nm sputtered TiN/30 nm ALD Al2O3/400 nm sputtered TiN and 50 nm ALD TiN/10 nm ALD Al2O3/50 nm ALD TiN, have been characterized for their leakage current, respectively. FN tunneling and PF emission are identified for the first set, whereas Schottky emission, hopping conduction, PF emission and FN tunneling are identified for the second set. Rough sputtered bottom electrode is suspected to be responsible for leakage current degradation.
URI: https://hdl.handle.net/10356/144085
Rights: © 2017 ADMETA Plus. All rights reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

Files in This Item:
File Description SizeFormat 
2017 ADMETA.pdf540.75 kBAdobe PDFView/Open

Page view(s)

98
Updated on Dec 5, 2022

Download(s)

12
Updated on Dec 5, 2022

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.