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dc.contributor.authorHu, Zehuaen_US
dc.contributor.authorHernández-Martínez, Pedro Ludwigen_US
dc.contributor.authorLiu, Xueen_US
dc.contributor.authorAmara, Mohamed-Raoufen_US
dc.contributor.authorZhao, Weijieen_US
dc.contributor.authorWatanabe, Kenjien_US
dc.contributor.authorTaniguchi, Takashien_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorXiong, Qihuaen_US
dc.identifier.citationHu, Z., Hernandez-Martinez, P. L., Liu, X., Amara, M.-R., Zhao, W., Watanabe, K., ... Xiong, Q. (2020). Trion-mediated förster resonance energy transfer and optical gating effect in WS2/hBN/MoSe2 heterojunction. ACS Nano, 14(10), 13470–13477. doi:10.1021/acsnano.0c05447en_US
dc.description.abstractvan der Waals two-dimensional layered heterostructures have recently emerged as a platform, where the interlayer couplings give rise to interesting physics and multifunctionalities in optoelectronics. Such couplings can be rationally controlled by dielectric, separation, and stacking angles, which affect the overall charge or energy-transfer processes, and emergent potential landscape for twistronics. Herein, we report the efficient Förster resonance energy transfer (FRET) in WS2/hBN/MoSe2 heterostructure, probed by both steady-state and time-resolved optical spectroscopy. We clarified the evolution behavior of the electron-hole pairs and free electrons from the trions, that is, ∼59.9% of the electron-hole pairs could transfer into MoSe2 by FRET channels (∼38 ps) while the free electrons accumulate at the WS2/hBN interface to photogate MoSe2. This study presents a clear picture of the FRET process in two-dimensional transition-metal dichalcogenides' heterojunctions, which establishes the scientific foundation for developing the related heterojunction optoelectronic devices.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relation.ispartofACS Nanoen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
dc.subjectScience::Physics::Optics and lighten_US
dc.titleTrion-mediated förster resonance energy transfer and optical gating effect in WS2/hBN/MoSe2 heterojunctionen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionAccepted versionen_US
dc.subject.keywordsFörster Resonance Energy Transferen_US
dc.subject.keywords2D Materialsen_US
dc.description.acknowledgementQ.X. gratefully acknowledges the Singapore Ministry of Education Tier3 Programme “Geometrical Quantum Materials” (MOE2018-T3-1-002), AcRF Tier2 grant (MOE2017-T2-1-040), and Tier1 grant (RG 194/17). Q.X. also acknowledges strong support from Singapore National Research Foundation Competitive Research Programme “Integrated On-chip Planar Coherent Light Sources” (NRF-CRP-21-2018-0007), and National Research Foundation-Agence Nationale de la Recherche (NRF-ANR) Grant (NRF2017-NRF-ANR005 2DCHIRAL). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. Author Contributions: Q.X. supervised the research. Z. H. conceived the idea. Z.H. and X.L. prepared the heterostructures. P.H.M. and H.V.D. performed the numerical simulation. Z.H., X.L., and M.R.A. performed the micro-spectroscopy experiments. K.W. and T.T. provided the h-BN bulk crystals. Z.H., X.L., and Q.X. analyzed the data. Z.H. wrote the manuscript with input from all authors.en_US
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