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dc.contributor.authorZhou, Haoen_US
dc.contributor.authorXu, Shengqiangen_US
dc.contributor.authorWu, Shaotengen_US
dc.contributor.authorHuang, Yi-Chiauen_US
dc.contributor.authorZhao, Pengen_US
dc.contributor.authorTong, Jinchaoen_US
dc.contributor.authorSon, Bongkwonen_US
dc.contributor.authorGuo, Xinen_US
dc.contributor.authorZhang, Dao Huaen_US
dc.contributor.authorGong, Xiaoen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.identifier.citationZhou, H., Xu, S., Wu, S., Huang, Y.-C., Zhao, P., Tong, J., ... Tan, C. S. (2020). Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate. Optics Express, 28(23), 34772-34786. doi:10.1364/OE.409944en_US
dc.description.abstractA GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relationNRF– CRP19–2017–01en_US
dc.relation.ispartofOptics Expressen_US
dc.rights© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.en_US
dc.subjectEngineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titlePhoto detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrateen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US
dc.description.acknowledgementNational Research Foundation Singapore (NRF–CRP19–2017–01); Ministry of Education - Singapore (R-263-000-D45-112); Ministry of Education - Singapore (R-263-000-C58-133).en_US
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