Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144531
Title: Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films : evaluation as thermally self-dissipating dielectrics for GaN transistors
Authors: Chng, Soon Siang
Zhu, Minmin
Du, Zehui
Wang, Xizu
Whiteside, Matthew
Ng, Zhi Kai
Shakerzadeh, Maziar
Tsang, Siu Hon
Teo, Edwin Hang Tong
Keywords: Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2020
Source: Chng, S. S., Zhu, M., Du, Z., Wang, X., Whiteside, M., Ng, Z. K., ... Teo, E. H. T. (2020). Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films : evaluation as thermally self-dissipating dielectrics for GaN transistors. Journal of Materials Chemistry C, 8, 9558-9568. doi:10.1039/d0tc02253e
Journal: Journal of Materials Chemistry C
Abstract: High performance tuneable dielectrics at millimetre-wave frequencies are crucial constituents for emerging adaptive and reconfigurable electronic applications in the automotive, artificial intelligence, and telecommunication industries. Hexagonal boron nitride (h-BN), an ideal candidate for gate-insulating dielectrics, is attractive for integrated circuits and photonic devices. However, advanced application to electronic and optoelectronic devices has often been limited by synthesis techniques and flake size, as well as dielectric reliability. Herein, we have studied the isotope engineering of h-BN thin films directly grown on wafer-scale Si and GaN substrates with pure boron isotopes (B10 and B11) in comparison with controlled isotopic compositions. The dielectric characteristics of isotope-enriched h-BN films at frequencies ranging up to 107 Hz were investigated, exhibiting a broad dielectric dispersion with a low dielectric loss, below 1.3%. Furthermore, their optical band gap energies indicate a strong dependence on isotopic composition, ranging from 5.54 to 5.79 eV. Thermal conductivity of pure B10N and B11N over a broad temperature range is superior to those of other compositions, with an enhancement of around 231%. Therefore, the great thermal response combined with excellent dielectric properties and a wide band gap make h-BN a promising dielectric material for heat self-dissipating GaN and AlGaN /GaN transistors. Hall mobility, sheet resistivity and sheet concentration of GaN with B10N films were analyzed, ascertaining that h-BN does function well as both a dielectric layer and a passivating layer on electronic devices. Our findings could lead to microelectronics thermal management and integrated optoelectronic applications at these frequencies.
URI: https://hdl.handle.net/10356/144531
ISSN: 2050-7526
DOI: 10.1039/d0tc02253e
Rights: © 2020 Royal Society of Chemistry. All rights reserved. This paper was published in Journal of Materials Chemistry C and is made available with permission of Royal Society of Chemistry.
Fulltext Permission: embargo_20210623
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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