Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144533
Title: Broadband extrinsic self-trapped exciton emission in Sn-doped 2D lead-halide perovskites
Authors: Yu, Jiancan
Kong, Jintao
Hao, Wei
Guo, Xintong
He, Huajun
Leow, Wan Ru
Liu, Zhiyuan
Cai, Pingqiang
Qian, Guodong
Li, Shuzhou
Chen, Xueyuan
Chen, Xiaodong
Keywords: Engineering::Materials
Issue Date: 2019
Source: Yu, J., Kong, J., Hao, W., Guo, X., He, H., Leow, W. R., . . . Chen, X. (2018). Broadband Extrinsic Self‐Trapped Exciton Emission in Sn‐Doped 2D Lead‐Halide Perovskites. Advanced Materials, 31(7), 1806385-. doi:10.1002/adma.201806385
Journal: Advanced materials
Abstract: As emerging efficient emitters, metal-halide perovskites offer the intriguing potential to the low-cost light emitting devices. However, semiconductors generally suffer from severe luminescence quenching due to insufficient confinement of excitons (bound electron-hole pairs). Here, Sn-triggered extrinsic self-trapping of excitons in bulk 2D perovskite crystal, PEA2 PbI4 (PEA = phenylethylammonium), is reported, where exciton self-trapping never occurs in its pure state. By creating local potential wells, isoelectronic Sn dopants initiate the localization of excitons, which would further induce the large lattice deformation around the impurities to accommodate the self-trapped excitons. With such self-trapped states, the Sn-doped perovskites generate broadband red-to-near-infrared (NIR) emission at room temperature due to strong exciton-phonon coupling, with a remarkable quantum yield increase from 0.7% to 6.0% (8.6 folds), reaching 42.3% under a 100 mW cm-2 excitation by extrapolation. The quantum yield enhancement stems from substantial higher thermal quench activation energy of self-trapped excitons than that of free excitons (120 vs 35 meV). It is further revealed that the fast exciton diffusion involves in the initial energy transfer step by transient absorption spectroscopy. This dopant-induced extrinsic exciton self-trapping approach paves the way for extending the spectral range of perovskite emitters, and may find emerging application in efficient supercontinuum sources.
URI: https://hdl.handle.net/10356/144533
ISSN: 0935-9648
DOI: 10.1002/adma.201806385
Rights: This is the accepted version of the following article: Yu, J., Kong, J., Hao, W., Guo, X., He, H., Leow, W. R., . . . Chen, X. (2018). Broadband Extrinsic Self‐Trapped Exciton Emission in Sn‐Doped 2D Lead‐Halide Perovskites. Advanced Materials, 31(7), 1806385-., which has been published in final form at 10.1002/adma.201806385. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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