Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144555
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dc.contributor.authorLai, Yuanmingen_US
dc.contributor.authorSu, Huaen_US
dc.contributor.authorWang, Gangen_US
dc.contributor.authorTang, Xiaolien_US
dc.contributor.authorHuang, Xinen_US
dc.contributor.authorLiang, Xiaofengen_US
dc.contributor.authorZhang, Huaiwuen_US
dc.contributor.authorLi, Yuanxunen_US
dc.contributor.authorHuang, Keen_US
dc.contributor.authorWang, Renshaw Xiaoen_US
dc.date.accessioned2020-11-12T03:59:24Z-
dc.date.available2020-11-12T03:59:24Z-
dc.date.issued2018-
dc.identifier.citationLai, Y., Su, H., Wang, G., Tang, X., Huang, X., Liang, X., . . . Wang, R. X. (2018). Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition. Journal of the American Ceramic Society, 102, 1893–1903. doi:10.1111/jace.16086en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttps://hdl.handle.net/10356/144555-
dc.description.abstractMicrowave ceramic with low‐sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low‐temperature sintering and good microwave dielectric properties, CaMgSi2O6–xLiF was sintered at various sintering temperatures using LiF as a sintering aid. In comparison to CaMgSi2O6 (x = 0) sintered at 1250°C, desirable microwave dielectric properties of εr = 7.45, Qf = 64 800 GHz, and τf = −34 ppm/°C and good chemical compatibility with the Ag electrodes, were achieved sintered at 900°C when adding 2 wt% LiF into CaMgSi2O6. Furthermore, a secondary phase, Li2MgSiO4, occurred at x ≥ 1 wt%, and the densest microstructure was obtained at the x value of ~2 wt%. We propose that the high Qf value and the low‐sintering temperature were obtained through moderate LiF addition, which promotes densification and provides Li as the acceptor dopant. By further verifying in Mg2SiO4 ceramic, our study demonstrates that the approach of adding LiF can realize low‐temperature sintering without jeopardizing the excellent microwave dielectric properties, and can potentially be applied in a wide range of low‐temperature sintering of electronic ceramics.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relation.ispartofJournal of the American Ceramic Societyen_US
dc.rights© The American Ceramic Society 2018. This is the author's version of the work. It is posted here by permission of The American Ceramic Society for personal use, not for redistribution. The definitive version was published in the Journal of the American Ceramic Society, 102, 1893-1903. https://doi.org/10.1111/jace.16086en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleLow‐temperature sintering of microwave ceramics with highQfvalues through LiF additionen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doi10.1111/jace.16086-
dc.description.versionAccepted versionen_US
dc.identifier.volume102en_US
dc.identifier.spage1893en_US
dc.identifier.epage1903en_US
dc.subject.keywordsMicrowave Ceramicen_US
dc.subject.keywordsRaman Spectraen_US
dc.description.acknowledgementSpecial Projects on Science and Technology of Guizhou Province, Grant/ Award Number: [2016]3011; National Key Research and Development Plan, Grant/Award Number: 2016YFA0300801; Academic Research Fund Tier 1 from Singapore Ministry of Education and Nanyang Assistant Professorship Grant, Grant/Award Number: RG108/17; Science and Technology Department of Sichuan Province, Grant/Award Number: 2015JQ0031, 2016JQ0016; National Natural Science Foundation of China, Grant/Award Number: 51772047, 61471096, 61771104en_US
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