Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144723
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dc.contributor.authorLai, Yuanmingen_US
dc.contributor.authorSu, Huaen_US
dc.contributor.authorWang, Gangen_US
dc.contributor.authorTang, Xiaolien_US
dc.contributor.authorLiang, Xiaofengen_US
dc.contributor.authorHuang, Xinen_US
dc.contributor.authorLi, Yuanxunen_US
dc.contributor.authorZhang, Huaiwuen_US
dc.contributor.authorYe, Chenen_US
dc.contributor.authorWang, Renshaw Xiaoen_US
dc.date.accessioned2020-11-20T07:26:27Z-
dc.date.available2020-11-20T07:26:27Z-
dc.date.issued2019-
dc.identifier.citationLai, Y., Su, H., Wang, G., Tang, X., Liang, X., Huang, X., . . . Wang, R. X. (2019). Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping. Journal of Alloys and Compounds, 772, 40–48. doi:10.1016/j.jallcom.2018.09.059en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttps://hdl.handle.net/10356/144723-
dc.description.abstractHigh-performance dielectric materials for microwave communication requires low dielectric constants (εr < 10), high quality factor (Qf) and near-zero temperature coefficient of resonance frequency (τf). However, CaMgSi2O6 ceramics typically exhibit low Qf and largely negative τf, despite its low εr. In this study, nominal composition CaMg1-xCuxSi2O6 (0 ≤ x ≤ 0.16) ceramics were synthesized via a solid-state reaction. Enhanced microwave dielectric properties were achieved in the x = 0.04 ceramic sintered at 1250 °C with εr = 7.41, Qf = 160 100 GHz (two times better than the previously reported values), and τf = −42 ppm/°C. Benefited from the optimal CuO doping, this enhancement in microwave dielectric property was realized by the contribution of order structure and the densification. Excess CuO doping, which can lead to a phase transition (from C2/c to P21/c), could degenerate the microwave dielectric properties of the CaMgSi2O6 ceramics. Considering the excellent microwave dielectric properties, the CuO-doped CaMgSi2O6 ceramic is a promising candidate material for microwave communication applications.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Alloys and Compoundsen_US
dc.rights© 2018 Elsevier B.V. All rights reserved. This paper was published in Journal of Alloys and Compounds and is made available with permission of Elsevier B.V.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleImproved microwave dielectric properties of CaMgSi2O6 ceramics through CuO dopingen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1016/j.jallcom.2018.09.059-
dc.description.versionAccepted versionen_US
dc.identifier.volume772en_US
dc.identifier.spage40en_US
dc.identifier.epage48en_US
dc.subject.keywordsCaMgSi2O6 Ceramicen_US
dc.subject.keywordsMicrowave Dielectric Propertyen_US
dc.description.acknowledgementThis work was supported by National Natural Science Foundation of China under Grant Nos. 61771104, 61471096 and 51772047, Science and Technology Department of Sichuan Province 2016JQ0016 and 2015JQ0031, Special Projects on Science and Technology of Guizhou Province, China [2016]3011, Ministry of Science and Technology of China, China, National Key Research and Development Plan No. 2016YFA0300801. X.R.W. acknowledges supports from the Nanyang Assistant Professorship grant from Nanyang Technological University and Academic Research Fund Tier 1 (RG108/17S) from Singapore Ministry of Education, Singapore.en_US
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