Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144792
Title: Multi-channel FSK inter/intra-chip communication by exploiting field-confined slow-wave transmission line
Authors: Chen, Qian
Boon, Chirn Chye
Zhang, Xueyong
Li, Chenyang
Liang, Yuan
Liu, Zhe
Guo, Ting
Keywords: Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 2020
Source: Chen, Q., Boon, C. C., Zhang, X., Li, C., Liang, Y., Liu, Z., & Guo, T. (2020). Multi-channel FSK inter/intra-chip communication by exploiting field-confined slow-wave transmission line. Proceedings of the 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5. doi:10.1109/ISCAS45731.2020.9180890
Abstract: Using on-chip slow-wave transmission line (SW-TL) has paved a new way towards millimeter-wave (mm-wave) to terahertz (THz) low power and high speed inter-/intra-chip communications. This work presents an on-chip SW-TL featured by periodic comb-shape grooves with capability to strongly localize electric-field. A gradient groove structure is proposed to serve as the mode converter and performs the mode transformation between the quasi-TEM wave and the slow-wave with low return loss. Due to field confinement, when two SW-TL are only 2.4 μm apart, more than 19 dB crosstalk suppression is observed compared with two conventional TL with the same metal spacing. A dual-channel 160 GHz frequency-shift keying (FSK) transceiver is designed in 65 nm CMOS technology. The preliminary results show that by exploiting SW-TL as the silicon channel, the receiver can recover error-free 4 Gb/s dual-channel data, whereas the eye diagram of the transceiver using traditional transmission line (TL) is fully distorted. The transceiver consumes 36 mW DC power from a 1.2 V power supply.
URI: https://hdl.handle.net/10356/144792
ISBN: 978-1-7281-3320-1
ISSN: 2158-1525
DOI: 10.1109/ISCAS45731.2020.9180890
Rights: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ISCAS45731.2020.9180890
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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