Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/144950
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dc.contributor.authorChidambaram, Viveken_US
dc.contributor.authorJing, T.en_US
dc.contributor.authorYang, Ren Binen_US
dc.contributor.authorShakerzadeh, Maziaren_US
dc.contributor.authorHoong, Lim Kuanen_US
dc.date.accessioned2020-12-04T06:41:43Z-
dc.date.available2020-12-04T06:41:43Z-
dc.date.issued2019-
dc.identifier.citationChidambaram, V., Jing, T., Yang, R. B., Shakerzadeh, M., & Hoong, L. K. (2019). Novel solution for high-temperature dielectric application to encapsulate high-voltage power semiconductor devices. IEEE Transactions on Components, Packaging and Manufacturing Technology, 9(1), 3-9. doi:10.1109/TCPMT.2018.2886810en_US
dc.identifier.issn2156-3950en_US
dc.identifier.urihttps://hdl.handle.net/10356/144950-
dc.description.abstractTraditional semiconductor packaging techniques and materials have been working well for conventional Si devices, which usually operate at temperatures up to 175 °C. As the operating temperature increases, these techniques exhibit failures such as bulk flows, volume shrinkage, brittleness and subsequent cracking, and deterioration of dielectric strength. For the new wide-bandgap power devices, which work at voltages as high as 1200 V and junction temperatures as high as 250 °C, there is currently no known dielectric material to encapsulate and protect the active devices. This paper summarizes novel solutions for high-temperature dielectric materials for encapsulating high-power semiconductor devices without any dielectric breakdown and also without introducing excessive thermal, electrical, and mechanical stresses to the encapsulated devices. Polymer dielectric candidates investigated in this paper include cyanate ester-based resin and silicone-based resin. In addition, conformal coating approaches that include alumina deposited by atomic layer deposition (ALD) technique and tetrahedral amorphous carbon (ta-c) deposited by filtered cathodic vacuum arc technique were evaluated in this paper. Dielectric strength performance of the material combinations with respect to temperatures was evaluated. Among the polymer encapsulants, a silicone resin with silica fillers was determined to be the prospective candidate. Breakdown voltage and leakage current of the silicone-based encapsulant with and without the conformal coating was measured by breakdown tests. It was determined that the ta-c conformal coating deteriorates the dielectric performance of the encapsulant, while the alumina thin film deposited by ALD approach reduces the leakage current of the encapsulation material and also increases the breakdown voltage of the silicone encapsulant. Thus, the combination of alumina thin film deposited by ALD approach along with the silicone encapsulant is recommended for this application, involving high temperature and high voltage.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Transactions on Components, Packaging and Manufacturing Technologyen_US
dc.rights© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCPMT.2018.2886810.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleNovel solution for high-temperature dielectric application to encapsulate high-voltage power semiconductor devicesen_US
dc.typeJournal Articleen
dc.contributor.researchTemasek Laboratories @ NTUen_US
dc.identifier.doi10.1109/TCPMT.2018.2886810-
dc.description.versionAccepted versionen_US
dc.identifier.issue1en_US
dc.identifier.volume9en_US
dc.identifier.spage3en_US
dc.identifier.epage9en_US
dc.subject.keywordsConformal Coatingen_US
dc.subject.keywordsDielectric Breakdownen_US
dc.description.acknowledgementThis work was supported by the A*STAR Aerospace Consortium.en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
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