Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145010
Title: Design of a wideband variable-gain amplifier with self-compensated transistor for accurate dB-linear characteristic in 65 nm CMOS technology
Authors: Kong, Lingshan
Liu, Hang
Zhu, Xi
Boon, Chirn Chye
Li, Chenyang
Liu, Zhe
Yeo, Kiat Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Kong, L., Liu, H., Zhu, X., Boon, C. C., Li, C., Liu, Z., & Yeo, K. S. (2020). Design of a wideband variable-gain amplifier with self-compensated transistor for accurate dB-linear characteristic in 65 nm CMOS technology. IEEE Transactions on Circuits and Systems I: Regular Papers, 67(12), 4187-4198. doi:10.1109/TCSI.2020.2995725
Journal: IEEE Transactions on Circuits and Systems I: Regular Papers
Abstract: A simple yet effective approach for variable-gain amplifier (VGA) design with accurate dB-linear characteristic is presented. In order to extend the bandwidth of the designed VGA with a minimized footprint, an inductorless-based approach is adopted. Moreover, a unique approach that exploits a self-compensated transistor to compensate dB-linear gain error is proposed. Consequently, the overall VGA has an accurate dB-linear inherent characteristic without using any additional exponential generator for gain control. To prove the concept, the designed VGA is fabricated in a standard 65 nm CMOS technology. The measured results show that the voltage gain of the designed VGA can be controlled from -19 dB to 21 dB with a gain error less than 1 dB. Meanwhile, more than 4 GHz of bandwidth can be achieved for the entire gain range. The power consumption of the VGA, excluding the output buffer, is 3.9 mW. The core circuit of this design only occupies an area of 0.012 mm².
URI: https://hdl.handle.net/10356/145010
ISSN: 1549-8328
DOI: 10.1109/TCSI.2020.2995725
Rights: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCSI.2020.2995725
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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