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|Title:||Performance enhanced light-emitting diodes fabricated from nanocrystalline CsPbBr3 with in situ Zn2+ addition||Authors:||Vashishtha, Parth
Griffith, Benjamin E.
Brown, Alasdair A. M.
Hooper, Thomas J. N.
Ansari, Mohammed S.
Pu, Suan Hui
Mhaisalkar, Subodh G.
Hanna, John V.
|Keywords:||Engineering::Materials||Issue Date:||2020||Source:||Vashishtha, P., Griffith, B. E., Brown, A. A. M., Hooper, T. J. N., Fang, Y., Ansari, M. S., ... Hanna, J. V. (2020). Performance enhanced light-emitting diodes fabricated from nanocrystalline CsPbBr3 with in situ Zn2+ addition. ACS Applied Electronic Materials. doi:10.1021/acsaelm.0c00827||Journal:||ACS Applied Electronic Materials||Abstract:||Inorganic cesium lead halide perovskite nanocrystals are promising materials for optoelectronic applications as they exhibit high thermal stability alongside precise color tunability and high color purity; however, their optical properties are degraded by surface defects. This work demonstrates a room temperature synthesis of CsPbBr3 nanocrystals facilitating in situ surface passivation via the incorporation of Zn2+ cations. The facile incorporation ZnBr2 into the precursor solution facilitates Zn2+ and Br− substitution into the nanocrystal surface/subsurface layers to induce passivation of existing Pb2+ and Br– vacancies and increase the photoluminescence quantum yield from ∼48 to 86%. The XPS and solid-state 1H MAS NMR techniques show that the key modification is a reduction of the octylamine:oleic acid ratio leading to a near-neutral surface charge; this is accompanied by the appearance of larger nanosheets and nanowires observed by quantitative powder XRD and HR-TEM. The suitability of these perovskite nanocrystals for electrically driven applications was confirmed by the fabrication of light-emitting diodes, which demonstrate that the in situ Zn2+ passivation strategy enhanced the external quantum efficiency by ∼60%.||URI:||https://hdl.handle.net/10356/145119||ISSN:||2637-6113||DOI:||10.1021/acsaelm.0c00827||Rights:||This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.0c00827||Fulltext Permission:||embargo_20211211||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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