Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145119
Title: Performance enhanced light-emitting diodes fabricated from nanocrystalline CsPbBr3 with in situ Zn2+ addition
Authors: Vashishtha, Parth
Griffith, Benjamin E.
Brown, Alasdair A. M.
Hooper, Thomas J. N.
Fang, Yanan
Ansari, Mohammed S.
Bruno, Annalisa
Pu, Suan Hui
Mhaisalkar, Subodh G.
White, Tim
Hanna, John V.
Keywords: Engineering::Materials
Issue Date: 2020
Source: Vashishtha, P., Griffith, B. E., Brown, A. A. M., Hooper, T. J. N., Fang, Y., Ansari, M. S., ... Hanna, J. V. (2020). Performance enhanced light-emitting diodes fabricated from nanocrystalline CsPbBr3 with in situ Zn2+ addition. ACS Applied Electronic Materials. doi:10.1021/acsaelm.0c00827
Journal: ACS Applied Electronic Materials
Abstract: Inorganic cesium lead halide perovskite nanocrystals are promising materials for optoelectronic applications as they exhibit high thermal stability alongside precise color tunability and high color purity; however, their optical properties are degraded by surface defects. This work demonstrates a room temperature synthesis of CsPbBr3 nanocrystals facilitating in situ surface passivation via the incorporation of Zn2+ cations. The facile incorporation ZnBr2 into the precursor solution facilitates Zn2+ and Br− substitution into the nanocrystal surface/subsurface layers to induce passivation of existing Pb2+ and Br– vacancies and increase the photoluminescence quantum yield from ∼48 to 86%. The XPS and solid-state 1H MAS NMR techniques show that the key modification is a reduction of the octylamine:oleic acid ratio leading to a near-neutral surface charge; this is accompanied by the appearance of larger nanosheets and nanowires observed by quantitative powder XRD and HR-TEM. The suitability of these perovskite nanocrystals for electrically driven applications was confirmed by the fabrication of light-emitting diodes, which demonstrate that the in situ Zn2+ passivation strategy enhanced the external quantum efficiency by ∼60%.
URI: https://hdl.handle.net/10356/145119
ISSN: 2637-6113
DOI: 10.1021/acsaelm.0c00827
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.0c00827
Fulltext Permission: embargo_20211211
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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