Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145169
Title: Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well
Authors: Fan, Weijun
Tan, Chuan Seng
Wang, Qi Jie
Nam, Donguk
Zhang, Dao Hua
Keywords: Engineering::Materials
Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Fan, W., Tan, C. S., Wang, Q. J., Nam, D., & Zhang, D. H. (2019). Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well. Proceedings of the 2019 Collaborative Conference on Materials Research (CCMR).
Abstract: Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material.[1] In this work, we will investigate the uniaxial tensile strain effect on the band structure and optical properties of Ge and Ge quantum well (QW) by using k.p method.[2-5]
URI: http://ccmr2019.org/
https://hdl.handle.net/10356/145169
Rights: © 2019 Collaborative Conference on Materials Research (CCMR). All rights reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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