Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145188
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dc.contributor.authorCheng, Chin-Yuanen_US
dc.contributor.authorTsai, Cheng-Hsunen_US
dc.contributor.authorYeh, Po-Lunen_US
dc.contributor.authorHung, Sheng-Fengen_US
dc.contributor.authorBao, Shuyuen_US
dc.contributor.authorLee, Kwang Hongen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.contributor.authorChang, Guo-Enen_US
dc.date.accessioned2020-12-15T02:03:54Z-
dc.date.available2020-12-15T02:03:54Z-
dc.date.issued2020-
dc.identifier.citationCheng, C.-Y., Tsai, C.-H., Yeh, P.-L., Hung, S.-F., Bao, S., Lee, K. H., ... Chang, G.-E. (2020). Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication. Optics Letters, 45(24), 6683-6686. doi:10.1364/OL.409842en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttps://hdl.handle.net/10356/145188-
dc.description.abstractWe report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile strain of 0.144% in the Ge active layers narrows the direct bandgap to enable efficient photodetection over the entire range of C- and L bands. The low-index insulator layer enhances optical confinement, resulting in a good optical responsivity. These results demonstrate the feasibility of planar Ge WGPDs for monolithic GOI-based EPICs.en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relation.ispartofOptics Lettersen_US
dc.rights© 2020 Optical Society of America (OSA). All rights reserved. This paper was published in Optics Letters and is made available with permission of Optical Society of America (OSA).en_US
dc.subjectEngineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleGe-on-insulator lateral p-i-n waveguide photodetectors for optical communicationen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1364/OL.409842-
dc.description.versionAccepted versionen_US
dc.identifier.issue24en_US
dc.identifier.volume45en_US
dc.identifier.spage6683en_US
dc.identifier.epage6686en_US
dc.subject.keywordsGermaniumen_US
dc.subject.keywordsPhotodetectoren_US
dc.description.acknowledgementThis work was support by the National Research Foundation Singapore Competitive Research Programme under Grant NRF–CRP19–2017–01.en_US
item.grantfulltextembargo_20211222-
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