Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145188
Title: Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication
Authors: Cheng, Chin-Yuan
Tsai, Cheng-Hsun
Yeh, Po-Lun
Hung, Sheng-Feng
Bao, Shuyu
Lee, Kwang Hong
Tan, Chuan Seng
Chang, Guo-En
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2020
Source: Cheng, C.-Y., Tsai, C.-H., Yeh, P.-L., Hung, S.-F., Bao, S., Lee, K. H., ... Chang, G.-E. (2020). Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication. Optics Letters, 45(24), 6683-6686. doi:10.1364/OL.409842
Journal: Optics Letters
Abstract: We report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile strain of 0.144% in the Ge active layers narrows the direct bandgap to enable efficient photodetection over the entire range of C- and L bands. The low-index insulator layer enhances optical confinement, resulting in a good optical responsivity. These results demonstrate the feasibility of planar Ge WGPDs for monolithic GOI-based EPICs.
URI: https://hdl.handle.net/10356/145188
ISSN: 0146-9592
DOI: 10.1364/OL.409842
Rights: © 2020 Optical Society of America (OSA). All rights reserved. This paper was published in Optics Letters and is made available with permission of Optical Society of America (OSA).
Fulltext Permission: embargo_20211222
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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