Please use this identifier to cite or link to this item:
Title: Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
Authors: Sandupatla, Abhinay
Arulkumaran, Subramaniam
Ing, Ng Geok
Nitta, Shugo
Kennedy, John
Amano, Hiroshi
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Sandupatla, A., Arulkumaran, S., Ing, N. G., Nitta, S., Kennedy, J., & Amano, H. (2020). Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors. Micromachines, 11(5), 519-. doi:10.3390/mi11050519
Journal: Micromachines
Abstract: Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V.
ISSN: 2072-666X
DOI: 10.3390/mi11050519
Rights: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
micromachines-11-00519-v2.pdf8.09 MBAdobe PDFView/Open

Citations 50

Updated on Jan 28, 2023

Web of ScienceTM
Citations 20

Updated on Jan 27, 2023

Page view(s)

Updated on Feb 4, 2023

Download(s) 50

Updated on Feb 4, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.