Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145190
Title: Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
Authors: Sandupatla, Abhinay
Arulkumaran, Subramaniam
Ing, Ng Geok
Nitta, Shugo
Kennedy, John
Amano, Hiroshi
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Sandupatla, A., Arulkumaran, S., Ing, N. G., Nitta, S., Kennedy, J., & Amano, H. (2020). Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors. Micromachines, 11(5), 519-. doi:10.3390/mi11050519
Journal: Micromachines
Abstract: Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V.
URI: https://hdl.handle.net/10356/145190
ISSN: 2072-666X
DOI: 10.3390/mi11050519
Rights: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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