Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/14525
Title: Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors
Authors: Radhakrishnan, K.
Wang, Hong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2007
Abstract: In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtures. Optimized HBT emitter etching process is developed by combining the plasma dry etching and the wet etching techniques. Submicron sized (0.6 μm × 20 μm) emitters have been demonstrated using direct electron beam lithography. RF performance of the MHBT devices (1.0×20 μm2) fabricated using the new dry-wet etch combination demonstrates fT and fMAX values of 92 GHz and 122 GHz, respectively. These values are higher than HBTs fabricated using all-wet-etch process.
URI: http://hdl.handle.net/10356/14525
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
RG83-05 K Radhakrishnan EEE.pdf
  Restricted Access
2.08 MBAdobe PDFView/Open

Page view(s) 50

297
Updated on Nov 26, 2020

Download(s) 10

4
Updated on Nov 26, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.