Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145317
Title: Black GaAs : gold-assisted chemical etching for light trapping and photon recycling
Authors: Lova, Paola
Soci, Cesare
Keywords: Science::Chemistry
Issue Date: 2020
Source: Lova, P., & Soci, C. (2020). Black GaAs : gold-assisted chemical etching for light trapping and photon recycling. Micromachines, 11(6), 573-. doi:10.3390/mi11060573
Project: M4082409
Journal: Micromachines
Abstract: Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces.
URI: https://hdl.handle.net/10356/145317
ISSN: 2072-666X
DOI: 10.3390/mi11060573
Rights: © 2020 The Authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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