Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145317
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dc.contributor.authorLova, Paolaen_US
dc.contributor.authorSoci, Cesareen_US
dc.date.accessioned2020-12-17T04:00:16Z-
dc.date.available2020-12-17T04:00:16Z-
dc.date.issued2020-
dc.identifier.citationLova, P., & Soci, C. (2020). Black GaAs : gold-assisted chemical etching for light trapping and photon recycling. Micromachines, 11(6), 573-. doi:10.3390/mi11060573en_US
dc.identifier.issn2072-666Xen_US
dc.identifier.urihttps://hdl.handle.net/10356/145317-
dc.description.abstractThanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces.en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.language.isoenen_US
dc.relationM4082409en_US
dc.relation.ispartofMicromachinesen_US
dc.rights© 2020 The Authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.subjectScience::Chemistryen_US
dc.titleBlack GaAs : gold-assisted chemical etching for light trapping and photon recyclingen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doi10.3390/mi11060573-
dc.description.versionPublished versionen_US
dc.identifier.pmid32517034-
dc.identifier.issue6en_US
dc.identifier.volume11en_US
dc.subject.keywordsMetal-assisted Chemical Etchingen_US
dc.subject.keywordsAntireflectionen_US
dc.description.acknowledgementC.S. would like to acknowledge the support of NTU Research Grant No. M4082409.en_US
item.grantfulltextopen-
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