Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145344
Title: Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
Authors: Lei, Dian
Lee, Kwang Hong
Huang, Yi-Chiau
Wang, Wei
Masudy-Panah, Saeid
Yadav, Sachin
Kumar, Annie
Dong, Yuan
Kang, Yuye
Xu, Shengqiang
Wu, Ying
Tan, Chuan Seng
Gong, Xiao
Yeo, Yee-Chia
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Lei, D., Lee, K. H., Huang, Y.-C., Wang, W., Masudy-Panah, S., Yadav, S., ... Yeo, Y.-C. (2018). Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate. IEEE Transactions on Electron Devices, 65(9), 3754-3761. doi:10.1109/TED.2018.2856738
Journal: IEEE Transactions on Electron Devices
Abstract: Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer bonding technique and was layer-transferred from a 300-mm GeSn/Ge/Si donor wafer. Material quality was examined using atomic force microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and high-resolution X-ray diffraction. The fabricated GeSn p-FinFETs exhibit a small subthreshold swing (S) of 79 mV/decade at V DS of -0.05 V (by a device with L CH of 200 nm and W Fin of 30 nm), good control of short channel effects, and high intrinsic transconductance (G m,int = 702 μS/μm at V DS of -0.5 V for L CH of 80 nm). Low-temperature mobility analysis was performed on the GeSn p-FinFETs. High effective hole mobility (μ eff ) (210 cm 2 /V·s at 290 K and 398 cm 2 /V·s at 5 K) is achieved. The GeSn p-FinFETs presented in this paper exhibit the highest G m,int /S sat at V DS of -0.5 V for all the reported GeSn p-FETs to date.
URI: https://hdl.handle.net/10356/145344
ISSN: 1557-9646
DOI: 10.1109/TED.2018.2856738
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TED.2018.2856738
Fulltext Permission: none
Fulltext Availability: No Fulltext
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