Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145344
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dc.contributor.authorLei, Dianen_US
dc.contributor.authorLee, Kwang Hongen_US
dc.contributor.authorHuang, Yi-Chiauen_US
dc.contributor.authorWang, Weien_US
dc.contributor.authorMasudy-Panah, Saeiden_US
dc.contributor.authorYadav, Sachinen_US
dc.contributor.authorKumar, Annieen_US
dc.contributor.authorDong, Yuanen_US
dc.contributor.authorKang, Yuyeen_US
dc.contributor.authorXu, Shengqiangen_US
dc.contributor.authorWu, Yingen_US
dc.contributor.authorTan, Chuan Sengen_US
dc.contributor.authorGong, Xiaoen_US
dc.contributor.authorYeo, Yee-Chiaen_US
dc.date.accessioned2020-12-17T08:51:12Z-
dc.date.available2020-12-17T08:51:12Z-
dc.date.issued2018-
dc.identifier.citationLei, D., Lee, K. H., Huang, Y.-C., Wang, W., Masudy-Panah, S., Yadav, S., ... Yeo, Y.-C. (2018). Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate. IEEE Transactions on Electron Devices, 65(9), 3754-3761. doi:10.1109/TED.2018.2856738en_US
dc.identifier.issn1557-9646en_US
dc.identifier.urihttps://hdl.handle.net/10356/145344-
dc.description.abstractGermanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer bonding technique and was layer-transferred from a 300-mm GeSn/Ge/Si donor wafer. Material quality was examined using atomic force microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and high-resolution X-ray diffraction. The fabricated GeSn p-FinFETs exhibit a small subthreshold swing (S) of 79 mV/decade at V DS of -0.05 V (by a device with L CH of 200 nm and W Fin of 30 nm), good control of short channel effects, and high intrinsic transconductance (G m,int = 702 μS/μm at V DS of -0.5 V for L CH of 80 nm). Low-temperature mobility analysis was performed on the GeSn p-FinFETs. High effective hole mobility (μ eff ) (210 cm 2 /V·s at 290 K and 398 cm 2 /V·s at 5 K) is achieved. The GeSn p-FinFETs presented in this paper exhibit the highest G m,int /S sat at V DS of -0.5 V for all the reported GeSn p-FETs to date.en_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.rights© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TED.2018.2856738en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleGermanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrateen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1109/TED.2018.2856738-
dc.identifier.issue9en_US
dc.identifier.volume65en_US
dc.identifier.spage3754en_US
dc.identifier.epage3761en_US
dc.subject.keywordsSubstratesen_US
dc.subject.keywordsSurface Treatmenten_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
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