Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/145413
Title: One-dimensional hexagonal boron nitride conducting channel
Authors: Park, Hyo Ju
Cha, Janghwan
Choi, Min
Kim, Jung Hwa
Tay, Roland Yingjie
Teo, Edwin Hang Tong
Park, Noejung
Hong, Suklyun
Lee, Zonghoon
Keywords: Engineering::Materials
Issue Date: 2020
Source: Park, H. J., Cha, J., Choi, M., Kim, J. H., Tay, R. Y., Teo, E. H. T., . . . Lee, Z. (2020). One-dimensional hexagonal boron nitride conducting channel. Science Advances, 6(10), eaay4958-. doi:10.1126/sciadv.aay4958
Project: 2010-0020207
Journal: Science Advances
Abstract: Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.
URI: https://hdl.handle.net/10356/145413
ISSN: 2375-2548
DOI: 10.1126/sciadv.aay4958
Rights: © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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